M*********m
发帖数: 2024 | 1 At least you should tell us which kind of interface material are the holes
drifting in? GaAs, AlGaAs, ... the effective mass is different for different
"holes".
The tunneling process is the easiest to work out, suppose the difference in
surface energy is Vd, then the tunneling time scale is hbar/Vd and the
tunneling rate is exp(-sqrt(2*m_eff*(Vd-E))/h*d), d is the thickness of the
layer. If Vd is smaller than the kinetic energy of the holes, that's accounted
by diffusion. Of course there might b |
|
