b******n
发帖数: 80 | 1 Sorry I can not type it in chinese since I am in lab right now.
There are lots of papers concerning the hybrid structure in localized
surface plasmon resonance (LSPR). I found that they are 2 catalogs. One is
photo quenching, the other is PL enhanced.
I have asked a expert that whether the PL of semiconductor can be enhanced
by LSPR. He said it is definitely not because the excited electron-hole pair
will transfer to metal rapidly resulting in quenching.
In my opinion, that is just one factor. If the emission wavelength is not in
the LSPR band, that is the quenching case. If it is in resonance, the
transferring electron from semiconductor will recombine as particles plasmon
, re-emission as same frequency. That is why PL enhancement.
However, in doi:10.1038/nmat1198, they use a dielectric layer from hindering
the electron transferring, I have calculated that the electron mean free
path is about 58 nm. Therefore, it is not necessary to make a dielectric
spacer if it is in resonance.
When I make such statement to that expert, he felt I am challenging him and
did not give me any respond just said you are very lucky but not me.
Can some one help me to determine whether I am right or wrong? |
|
