MERL is seeking a highly motivated, qualified individual to join our 3 to 6
month internship program to carry research in the area of high power
electronics and device semiconductors. The ideal candidate should have a
significant background in the simulation and design of RF power amplifier,
transmitter RF front-end module and well verse in the various architectures
of a radio transmitter. Proficiency in high power device semiconductor and
modeling would be a great asset. Candidates who hold a PhD or in their
senior years of a Ph.D. program are encouraged to apply
Apply via email to Dr. Teo at t*[email protected]
