J*******d
发帖数: 72 | 1 for a-Si:H and uc-Si:H(or nc-Si:H), pin structure is commonly used. however,
for poly-Si, it seems no pin structure yet, only p-n diode structure. Why?
any super cow can give me a reasonable explanation?
Thanks! | j********1
发帖数: 628 | | H*****l
发帖数: 702 | 3 this efficiency sucks
why do we need poly pin cell?
why do we need a i poly region to collect e- and h+
a-si growth rate is high---time saving
uc-si is developed to compensate for stabler-wronski effects
so is there any place for poly si?
【在 j********1 的大作中提到】
: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?tp=&arnumber=916010&isnumber=19792
| J*******d
发帖数: 72 | 4 I think it should called uc-Si instead of poly-Si, strictly speaking. Do you
agree?
【在 j********1 的大作中提到】
: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?tp=&arnumber=916010&isnumber=19792
| J*******d
发帖数: 72 | 5 1. the efficiency is not that bad. CSG can reach 8%
2. it may be necessary to get poly pin structure if the poly quality is not
good. The question is, why nobody work on this pin structure
3. actually, you can grow a-Si first, and crystallize using say SPC.
4. still there are many issues for the tandem cell, like current match.
complex processing et al
5. personally, I think poly-si thin film is the way. you may not agree, but
let's wait and see for 5 years from now on:)
【在 H*****l 的大作中提到】
: this efficiency sucks
: why do we need poly pin cell?
: why do we need a i poly region to collect e- and h+
: a-si growth rate is high---time saving
: uc-si is developed to compensate for stabler-wronski effects
: so is there any place for poly si?
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