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全部话题 - 话题: modfet
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b**d
发帖数: 7
1
来自主题: EE版 - Re: HEMT/MODFET
Usually these devices are for microwave applications.
There should be a lot of books about them in library.
just do not know why you can not find them.
For good theory, Michael Shur is recommended.
l*******e
发帖数: 1485
2
我是用snider的那个1d possion.exe 看不见code吧。
我贴个能带图。可以明显看到沟道层undoped GaAs Ec-Ef<0.2, 这也跟教材上一致,但
我只是不明白为什么不是Ec-Ef=Eg/2.
下面是材料参数:
==================================
# A single heterostructure MODFET
# There is not sufficient confinement at the edge of the schrodinger mesh
# so the dreaded "Danger Will Robinson" message is generated.
surface schottky=.6 v1
GaAs t=0 Nd=1e17
AlGaAs t=300 Nd=1e18 x=.3
AlGaAs t=100 x=.3
GaAs t=5000
substrate fullyionized
v1 0.0
no holes
schrodi
m*******e
发帖数: 119
3
FET is the general name for all field-effect devices, such as MOSFET, MESFET
, JFET, thin-film transistor, etc. HEMT, also called MODFET, is a sub-group
of FET. All FET devices uses electric field created by gate voltage to
control the conduction level between source and drain (that's why they are
called field effect transistor).
In traditional FET devices, the channel region is doped with impurities.
Carrier mobility is reduced due to scattering by the impurity ions. To
enhance carrier mobility
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